Fast-charging applications beget desire for a MOSFET featuring minimal on-resistance, and that's exactly what's being developed.
In the ever-evolving world of electronics, space-saving solutions are paramount. ROHM Semiconductor has taken a significant step forward with their latest innovation, the AW2K21. This compact dual N-channel power MOSFET offers significant advantages over conventional solutions and Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) in terms of on-resistance, losses, footprint, and miniaturization.
The AW2K21, housed in a 2.0mm x 2.0mm WLCSP package, integrates two N-channel MOSFETs in a common-source configuration within a single chip. This design reduces conduction losses and supports high current operation, making it ideal for fast-charging and bidirectional protection applications.
Compared to conventional discrete MOSFET solutions, the AW2K21 reduces the footprint by approximately 81% while lowering on-resistance by about 33%. This significantly decreases power loss and thermal buildup in compact power management circuits.
Moreover, the AW2K21 delivers up to 50% lower on-resistance compared to similar-sized GaN HEMTs, contributing to lower power consumption and easier thermal management. The key innovation enabling this performance gain is the AW2K21's drain terminal placement on the top surface, which increases the chip-to-package area ratio and leads to enhanced miniaturization and reduced on-resistance per unit area.
The AW2K21 is capable of delivering up to 20 A at between 28 and 30 V, making it suitable for high-power, fast-charging applications. Its proprietary structure enhances cell density while minimizing the on-resistance per unit chip area. The two MOSFETs are integrated in a single package, simplifying design and saving board space.
In summary, the AW2K21 offers:
- Ultra-low on-resistance (2.0mΩ typical) reducing conduction losses.
- Up to 81% smaller footprint versus conventional dual MOSFET setups.
- Approximately 33% lower on-resistance than discrete MOSFET pairs.
- Up to 50% lower on-resistance compared to similar-sized GaN HEMTs.
- High current support (around 20A max), ideal for high-power, fast-charging applications.
- Single-chip integration of two MOSFETs for bidirectional protection, simplifying design and saving board space.
These advantages make the AW2K21 highly suited for compact, energy-efficient power supply and charging circuits in modern portable electronics. Datasheets and application information for the AW2K21 are available for those interested in exploring its potential further.
ROHM also claims that the on-resistance of the AW2K21 is decreased by up to 50% compared to similarly sized GaN HEMTs, setting a new industry standard for power efficiency and miniaturization. With its innovative design and impressive performance, the AW2K21 is poised to revolutionize the field of power electronics.
The AW2K21, with its ultra-low on-resistance and compact size, represents a significant technological advancement in power electronics, setting a new industry standard for power efficiency and miniaturization. This innovation is particularly beneficial for modern portable electronics, offering energy-efficient power supply and charging circuits in a smaller form factor.
