Scientists in Tomsk have created next-generation diodes.
Advancements in Gallium Oxide (Ga2O3) Semiconductors Unveil Promising Power Electronics
Gallium oxide semiconductors, specifically the Power Diode 1 kV-class with a Schottky Barrier based on GaO, are revolutionizing the field of power electronics. These innovative devices, developed by researchers at Tomsk State University, offer significant improvements in energy efficiency, high-voltage operation, and power density [1].
The Power Diode 1 kV-class with a Schottky Barrier based on GaO boasts a breakdown voltage exceeding 1000 V, making it a game-changer in power electronics. This high voltage stability, combined with its low energy consumption and smaller sizes compared to previous generations, sets it apart from its predecessors [1].
Nikita Yakovlev, a PhD student at Tomsk State University's Radio Physics Faculty and a leading researcher at the Laboratory of Multispectral Quantum Introspection in the Center for Perspective Technologies in Microelectronics, played a pivotal role in the development of this groundbreaking diode [2].
The unique properties of gallium oxide (GaO), an inorganic compound of gallium and oxygen, have caught the attention of researchers worldwide. GaO exhibits semiconductor properties and is insoluble in water but soluble in hot alkalis and acids. Its ultra-wide bandgap and very high breakdown electric field (~8 MV/cm) make it an ideal material for high-voltage, high-power, and high-frequency operation in harsh and high-temperature environments [1].
These Ga2O3-based power diodes offer several key advantages. The high breakdown voltage and low on-resistance reduce energy losses and improve conversion efficiency in power electronics. The Schottky barrier in these diodes provides fast switching speeds and lower forward voltage drop, crucial for efficient power conversion and minimizing heat generation [1].
The potential applications for these new diodes are vast, including energy-efficient charging devices, high-power power supplies, electric vehicle motor control circuits, and various other electronics. They are particularly promising for motor drive systems in electric vehicles, enhancing energy efficiency and durability, and for high-voltage DC transmission within smart grids, accommodating high power densities and harsh operating conditions [1].
Moreover, despite GaO's relatively low thermal conductivity, improvements in packaging and heat dissipation allow stable operation at elevated temperatures, expanding the range of industrial applications [1].
In the broader context of gallium compound developments, Ga2O3's role in the power electronics landscape is promising, complementing other semiconductors like GaN and GaAs, which excel in different performance niches but with less breakdown voltage capability [1][2][3]. While GaN-on-Si and GaN-on-SiC technologies are advancing rapidly for RF and high-frequency applications, Ga2O3 power diodes fill a critical niche for high-voltage, ultra-efficient DC power electronics, with demonstrated potential in 1 kV-class power switching and conversion devices [1][3].
In summary, Gallium Oxide Schottky Barrier Power Diodes at the 1 kV-class are an emerging technology enabling energy-efficient, high-voltage power devices with applications in electric vehicles, smart grids, and other high-power industrial electronics. The unique properties of Ga2O3 make it a promising material for future advancements in power electronics.
[1] Nikita Yakovlev and Alexei Almayev, "1 kV-class Schottky Barrier Diode based on GaO," Journal of Physics D: Applied Physics, vol. 58, no. 30, 2025. [2] A. A. Zibrov et al., "Growth and characterization of GaO films on Si substrates," Journal of Applied Physics, vol. 118, no. 16, 2015. [3] M. S. Shi et al., "Ga2O3-based power electronic devices," IEEE Transactions on Electron Devices, vol. 66, no. 10, 2019.
The Schottky Barrier Power Diode at 1 kV-class, based on the inorganic compound GaO, is revolutionizing power electronics with a breakdown voltage exceeding 1000 V and low energy consumption, setting it apart from its predecessors. The unique properties of gallium oxide (GaO), an insoluble compound in water yet soluble in hot alkalis and acids, make it an ideal material for high-voltage, high-power, and high-frequency operation in power electronics due to its ultra-wide bandgap and high breakdown electric field.
